![](/img/cover-not-exists.png)
[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs
Rim, K., Chan, K., Shi, L., Boyd, D., Ott, J., Klymko, N., Cardone, F., Tai, L., Koester, S., Cobb, M., Canaperi, D., To, B., Duch, E., Babich, I., Carruthers, R., Saunders, P., Walker, G., Zhang, Y.,Year:
2003
Language:
english
DOI:
10.1109/iedm.2003.1269163
File:
PDF, 277 KB
english, 2003