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[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Interactions between precisely placed dopants and interface roughness in silicon nanowire transistors: Full 3-D NEGF simulation study
Georgiev, Vihar P., Towie, Ewan A., Asenov, AsenYear:
2013
Language:
english
DOI:
10.1109/sispad.2013.6650663
File:
PDF, 1004 KB
english, 2013