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[IEEE 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Tokyo, Japan (2014.7.15-2014.7.16)] 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Annealing characteristics of p+-Si/n-4H-SiC junctions by using surface-activated bonding
Nishida, S., Liang, J., Hayashi, T., Morimoto, M., Shigekawa, N., Arai, M.Year:
2014
Language:
english
DOI:
10.1109/ltb-3d.2014.6886193
File:
PDF, 229 KB
english, 2014