[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack
Lin, Jianqiang, Lee, Sungjoo, Oh, Hoon-Jung, Yang, Weifeng, Lo, G. Q., Kwong, D. L., Chi, D. Z.Year:
2008
Language:
english
DOI:
10.1109/IEDM.2008.4796705
File:
PDF, 1.13 MB
english, 2008