A 1.1 THz Gain-Bandwidth $W$-Band Amplifier in a 0.12 $\mu {\rm m}$ Silicon Germanium BiCMOS Process
Kim, Joohwa, Buckwalter, James F.Volume:
20
Language:
english
Journal:
IEEE Microwave and Wireless Components Letters
DOI:
10.1109/lmwc.2010.2073693
Date:
November, 2010
File:
PDF, 479 KB
english, 2010