[IEEE 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2012) - Singapore, Singapore (2012.07.2-2012.07.6)] 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - A novel internal field enhanced retention degradation model for localized charge trapping memory device
Yu, Xiao, Pan, Liyang, Qiao, Fengying, Shi, Guangjian, Xu, JunYear:
2012
Language:
english
DOI:
10.1109/IPFA.2012.6306295
File:
PDF, 273 KB
english, 2012