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$\hbox{1}/f$ Noise in 45-nm RESET-State Phase-Change Memory Devices: Characterization, Impact on Memory Readout Operation, and Scaling Perspectives
Betti Beneventi, Giovanni, Ferro, Massimo, Fantini, PaoloVolume:
33
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2012.2214472
Date:
November, 2012
File:
PDF, 269 KB
english, 2012