[IEEE 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2014.4.28-2014.4.30)] Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Mechanistic understanding of mobility degradation on gate-last ZrO2 with medium thermal budget annealing
Ngai, T., Clark, R. D., Veksler, D., Matthews, K., Bersch, E., Gilmer, D.C., Bersuker, G., Hill, R., Hobbs, C., Tapily, K., Wajda, C. S., Consiglio, S., Burroughs, T., Vivekanand, S., Kaushik, V., LeuYear:
2014
Language:
english
DOI:
10.1109/vlsi-tsa.2014.6839649
File:
PDF, 588 KB
english, 2014