Theoretical study of optoelectronic properties of...

Infrared Physics & Technology 2014 / 11 Vol. 67

Theoretical study of optoelectronic properties of GaAs1−xBix alloys using valence band anticrossing model

Habchi, M.M., Ben Nasr, A., Rebey, A., El Jani, B.
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Volume:
67
Language:
english
Journal:
Infrared Physics & Technology
DOI:
10.1016/j.infrared.2014.09.032
Date:
November, 2014
File:
PDF, 656 KB
english, 2014
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