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[IEEE IEEE Lester Eastmann Biennial Conference - Newark, DE, USA (6-8 Aug. 2002)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices - Effect of recess length on DC and RF performance of gate-recessed AlGaN/GaN HEMTs
Kuliev, A., Kumar, V., Schwindt, R., Selvanathan, D., Dabiran, A.M., Chow, P., Adesida, I.Year:
2002
Language:
english
DOI:
10.1109/LECHPD.2002.1146784
File:
PDF, 458 KB
english, 2002