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[IEEE 2012 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA, USA (2012.04.15-2012.04.19)] 2012 IEEE International Reliability Physics Symposium (IRPS) - New insights into gate-dielectric breakdown by electrical characterization of interfacial and oxide defects with reverse modeling methodology
Mamy Randriamihaja, Y., Garetto, D., Huard, V., Rideau, D., Roy, D., Rafik, M., Bravaix, A.Year:
2012
Language:
english
DOI:
10.1109/irps.2012.6241914
File:
PDF, 820 KB
english, 2012