The Impact of Trench Depth on the Reliability of...

IEEE Electron Device Letters 2010 / 07 Vol. 31; Iss. 7

The Impact of Trench Depth on the Reliability of Repetitively Avalanched Low-Voltage Discrete Power Trench nMOSFETs

Alatise, Olayiwola, Kennedy, Ian, Petkos, George, Heppenstall, Keith, Parkin, Jim, Khan, Khalid, Koh, Adrian, Rutter, Phil
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Volume:
31
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2010.2048994
Date:
July, 2010
File:
PDF, 311 KB
english, 2010
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