Model for a-Si:H/c-Si interface recombination based on the...

Physical Review B 2007 / 7 Vol. 76; Iss. 3

Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds

Olibet, Sara, Vallat-Sauvain, Evelyne, Ballif, Christophe
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Volume:
76
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.76.035326
Date:
July, 2007
File:
PDF, 1.05 MB
english, 2007
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