Hole confinement MOS-gated Ge/sub x/Si/sub 1-x//Si...

IEEE Electron Device Letters 1991 / 05 Vol. 12; Iss. 5

Hole confinement MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructures

Garone, P.M., Venkataraman, V., Sturni, J.C.
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Volume:
12
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.79566
Date:
May, 1991
File:
PDF, 268 KB
english, 1991
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