[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Investigation of anomalous relation for HCI-induced abrupt VT fall-off and gate-oxide destruction with Ig-Vg curves in LD-PMOSFETs
Fujii, H., Yagami, Y., Ushiroda, M., Furuya, K., Onishi, K., Yoshihisa, Y., Ichikawa, T.Year:
2014
Language:
english
DOI:
10.1109/ispsd.2014.6856058
File:
PDF, 1021 KB
english, 2014