Analysis of the Back-Gate Effect on the on-State Breakdown...

IEEE Transactions on Device and Materials Reliability 2006 / 09 Vol. 6; Iss. 3

Analysis of the Back-Gate Effect on the on-State Breakdown Voltage of Smartpower SOI Devices

Schwantes, S., Furthaler, J., Schauwecker, B., Dietz, F., Graf, M., Dudek, V.
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Volume:
6
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/tdmr.2006.883128
Date:
September, 2006
File:
PDF, 541 KB
english, 2006
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