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[IEEE IEEE International Integrated Reliability Workshop - Lake Tahoe, CA, USA (21-24 Oct. 2002)] IEEE International Integrated Reliability Workshop Final Report, 2002. - Model for NBTI in p-MOSFETs with ultra thin nitrided gated oxides
Houssa, M., Parthasarathy, C.R., Huard, V., Revil, N., Vincent, E., Autran, J.L.Year:
2002
Language:
english
DOI:
10.1109/irws.2002.1194250
File:
PDF, 140 KB
english, 2002