New interface state density extraction method applicable to...

IEEE Electron Device Letters 2006 / 05 Vol. 27; Iss. 5

New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development

Martens, K., Brice De Jaeger,, Bonzom, R., Van Steenbergen, J., Meuris, M., Groeseneken, G., Maes, H.
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Volume:
27
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2006.873767
Date:
May, 2006
File:
PDF, 116 KB
english, 2006
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