In-depth characterization of the hole mobility in 50-nm...

IEEE Electron Device Letters 2005 / 10 Vol. 26; Iss. 10

In-depth characterization of the hole mobility in 50-nm process-induced strained MOSFETs

Andrieu, F., Ernst, T., Ravit, C., Jurczak, M., Ghibaudo, G., Deleonibus, S.
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Volume:
26
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2005.855413
Date:
October, 2005
File:
PDF, 155 KB
english, 2005
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