Circuit Design-Oriented Stochastic Piecewise Modeling of...

IEEE Transactions on Device and Materials Reliability 2012 / 03 Vol. 12; Iss. 1

Circuit Design-Oriented Stochastic Piecewise Modeling of the Postbreakdown Gate Current in MOSFETs: Application to Ring Oscillators

Martin-Martinez, Javier, Kaczer, Ben, Degraeve, Robin, Roussel, Philippe J., Rodriguez, Rosana, Nafria, Montserrat, Aymerich, Xavier, Dierickx, B., Groeseneken, Guido
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Volume:
12
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/tdmr.2011.2162238
Date:
March, 2012
File:
PDF, 749 KB
english, 2012
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