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[IEEE IC's (ISPSD) - Orlando, FL, USA (2008.05.18-2008.05.22)] 2008 20th International Symposium on Power Semiconductor Devices and IC's - 4H-SiC Double RESURF MOSFETs with a Record Performance by Increasing RESURF Dose
Noborio, Masato, Suda, Jun, Kimoto, TsunenobuYear:
2008
Language:
english
DOI:
10.1109/ISPSD.2008.4538949
File:
PDF, 203 KB
english, 2008