[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - A novel nickel SALICIDE process technology for CMOS devices with sub-40 nm physical gate length
Lu, J.P., Miles, D., Zhao, J., Gurba, A., Xu, Y., Lin, C., Hewson, M., Ruan, J., Tsung, L., Kuan, R., Grider, T., Mercer, D., Montgomery, C.Year:
2002
Language:
english
DOI:
10.1109/iedm.2002.1175855
File:
PDF, 278 KB
english, 2002