[IEEE GaAs IC Symposium IEEE Gallium Arsenide Integrated...

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[IEEE GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 - Orlando, FL, USA (3-6 Nov. 1996)] GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 - 27 GHz bandwidth high speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET-traveling wave amplifier

van Waasen, S., Umbach, A., Auer, U., Back, H.-G., Bertenburg, R.M., Mekonnen, G.G., Passenberg, W., Reuter, R., Schlaak, W., Schramm, C., Unterborsch, G., Wolfram, P., Tegude, F.J.
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Year:
1996
Language:
english
DOI:
10.1109/gaas.1996.567882
File:
PDF, 471 KB
english, 1996
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