[IEEE 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD '99 - Toronto, Ont., Canada (26-28 May 1999)] 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) - Properties of CoolMOS/sup TM/ between 420 K and 80 K-the ideal device for cryogenic applications

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