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A hydrogen-transport-based interface-trap-generation model for hot-carrier reliability prediction
Pagey, M.P., Schrimpf, R.D., Galloway, K.F., Nicklaw, C.J., Ikeda, S., Kamohara, S.Volume:
22
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.924845
Date:
June, 2001
File:
PDF, 49 KB
english, 2001