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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Polarization engineering of InAlN/GaN HFET and the effect on DC and RF performance
O. Katz, D. MisteleYear:
2004
Language:
english
DOI:
10.1109/IEDM.2004.1419367
File:
PDF, 254 KB
english, 2004