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[IEEE International Electron Devices Meeting. Technical Digest - Washington, DC, USA (2-5 Dec. 2001)] International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) - A record high 150 GHz f/sub max/ realized at 0.18 μm gate length in an industrial RF-CMOS technology
Tiemeijer, L.F., Boots, H.M.J., Havens, R.J., Scholten, A.J., de Vreede, P.H.W., Woerlee, P.H., Heringa, A., Klaassen, D.B.M.Year:
2001
Language:
english
DOI:
10.1109/iedm.2001.979471
File:
PDF, 426 KB
english, 2001