Strain relaxation of the In 0.53...

CrystEngComm 2014 / 09 Vol. 16; Iss. 46

Strain relaxation of the In 0.53 Ga 0.47 As epi-layer grown on a Si substrate using molecular beam epitaxy

Gao, Fangliang, Wen, Lei, Guan, Yunfang, Li, Jingling, Zhang, Xiaona, Jia, Miaomiao, Zhang, Shuguang, Li, Guoqiang
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Volume:
16
Language:
english
Journal:
CrystEngComm
DOI:
10.1039/c4ce01607f
Date:
September, 2014
File:
PDF, 3.54 MB
english, 2014
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