Reliability of La-Doped Hf-Based Dielectrics nMOSFETs

IEEE Transactions on Device and Materials Reliability 2009 / 06 Vol. 9; Iss. 2

Reliability of La-Doped Hf-Based Dielectrics nMOSFETs

Chang Yong Kang,, Kirsch, P.D., Byoung Hun Lee,, Hsing-Huang Tseng,, Jammy, R.
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Volume:
9
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/tdmr.2009.2020741
Date:
June, 2009
File:
PDF, 1.55 MB
english, 2009
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