Hafnium oxide gate dielectrics grown from an alkoxide...

Materials Science and Engineering: B 2004 Vol. 109; Iss. 1-3

Hafnium oxide gate dielectrics grown from an alkoxide precursor: structure and defects

Martin M Frank, Safak Sayan, Sabine Dörmann, Thomas J Emge, Leszek S Wielunski, Eric Garfunkel, Yves J Chabal
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Volume:
109
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.mseb.2003.10.020
File:
PDF, 107 KB
english, 2004
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