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[IEEE 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) - Santa Barbara, CA, USA (27-31 March 1994)] Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) - In/sub 0.5/Ga/sub 0.5/P spacer layer for high drain breakdown voltage InGaAs/InAlAs HFET on InP grown by MOVPE
Scheffer, F., Lindner, A., Heedt, C., Reuter, R., Liu, Q., Prost, W., Tegude, F.J.Year:
1994
Language:
english
DOI:
10.1109/ICIPRM.1994.328264
File:
PDF, 329 KB
english, 1994