Excitons bound to nitrogen complexes in heavily doped GaAs1−xNx grown on GaAs misoriented substrates
F. Bousbih, S. Ben Bouzid, R. Chtourou, J.C. HarmandVolume:
112
Year:
2004
Language:
english
Pages:
4
DOI:
10.1016/j.mseb.2004.05.008
File:
PDF, 141 KB
english, 2004