New Investigation of Hot-Carrier Degradation on RF Small-Signal Parameter and Performance in High-$k$/Metal-Gate nMOSFETs
Sagong, Hyun Chul, Kang, Chang Yong, Sohn, Chang-Woo, Choi, Do-Young, Jeong, Eui-Young, Baek, Chang-Ki, Lee, Jeong-Soo, Jeong, Yoon-HaVolume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2011.2169039
Date:
December, 2011
File:
PDF, 393 KB
english, 2011