Electro- and thermomigration induced Cu3Sn and Cu6Sn5...

Microelectronics Reliability 2015 / 01 Vol. 55; Iss. 1

Electro- and thermomigration induced Cu3Sn and Cu6Sn5 formation in SnAg3.0Cu0.5 bumps

Meinshausen, L., Frémont, H., Weide-Zaage, K., Plano, Bernard
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
55
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2014.09.030
Date:
January, 2015
File:
PDF, 1.01 MB
english, 2015
Conversion to is in progress
Conversion to is failed