A two-step annealing process for Ni silicide formation in...

Materials Science and Engineering: B 2008 Vol. 147; Iss. 2-3

A two-step annealing process for Ni silicide formation in an ultra-thin body RF SOI MOSFET

Chang-Geun Ahn, Tae-Youb Kim, Jong-Heon Yang, In-Bok Baek, Won-ju Cho, Seongjae Lee
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Volume:
147
Year:
2008
Language:
english
Pages:
4
DOI:
10.1016/j.mseb.2007.09.020
File:
PDF, 575 KB
english, 2008
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