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Electrically active defects in erbium-implanted silicon: Effects of annealing under high hydrostatic pressures and electron irradiation
V.V. Emtsev, V.V. Emtsev Jr., V.V. Kozlovskii, A. Misiuk, G.A. Oganesyan, D.S. Poloskin, N.A. Sobolev, E.A. TroppVolume:
159-160
Year:
2009
Language:
english
Pages:
3
DOI:
10.1016/j.mseb.2008.05.008
File:
PDF, 136 KB
english, 2009