Controlling the size of InAs quantum dots on...

Materials Science and Engineering: B 2009 Vol. 165; Iss. 1-2

Controlling the size of InAs quantum dots on Si1−xGex/Si(0 0 1) by metalorganic vapor-phase epitaxy

Kenichi Kawaguchi, Hiroji Ebe, Mitsuru Ekawa, Akio Sugama, Yasuhiko Arakawa
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Volume:
165
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.mseb.2008.10.006
File:
PDF, 466 KB
english, 2009
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