Germanium–Tin $\hbox{n}^{+}\hbox{/p}$ Junction Formed Using...

IEEE Electron Device Letters 2012 / 11 Vol. 33; Iss. 11

Germanium–Tin $\hbox{n}^{+}\hbox{/p}$ Junction Formed Using Phosphorus Ion Implant and 400 $^{\circ} \hbox{C}$ Rapid Thermal Anneal

Wang, Lanxiang, Su, Shaojian, Wang, Wei, Yang, Yue, Tong, Yi, Liu, Bin, Guo, Pengfei, Gong, Xiao, Zhang, Guangze, Xue, Chunlai, Cheng, Buwen, Han, Genquan, Yeo, Yee-Chia
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Volume:
33
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2012.2212871
Date:
November, 2012
File:
PDF, 393 KB
english, 2012
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