Comment on "A theory of enhanced impact ionization due...

IEEE Electron Device Letters 1986 / 07 Vol. 7; Iss. 7

Comment on "A theory of enhanced impact ionization due to the gate field and mobility degradation in the inversion layer of MOSFET's"

Rothwarf, A.
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Volume:
7
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/edl.1986.26435
Date:
July, 1986
File:
PDF, 127 KB
english, 1986
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