[IEEE 2011 IEEE International Electron Devices Meeting...

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[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Improved high-k/metal gate lifetime via improved SILC understanding and mitigation

Minseok Jo,, Chang Young Kang,, Huang, Jeff, Bersuker, Gennadi, Young, Chadwin, Kirsch, Paul, Jammy, Raj
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Year:
2011
Language:
english
DOI:
10.1109/iedm.2011.6131578
File:
PDF, 390 KB
english, 2011
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