Enhancement of IR emission from a dislocation network in Si due to an external bias voltage
X. Yu, O.F. Vyvenko, M. Reiche, M. KittlerVolume:
27
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.msec.2006.06.025
File:
PDF, 485 KB
english, 2007