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[IEEE Technical Digest., International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1988)] Technical Digest., International Electron Devices Meeting - A buried-trench DRAM cell using a self-aligned epitaxy over trench technology
Lu, N.C.C., Rajeevakumar, T.V., Bronner, G.B., Ginsberg, B., Machesney, B.J., Sprogis, E.J.Year:
1988
DOI:
10.1109/iedm.1988.32883
File:
PDF, 393 KB
1988