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[IEEE IC's (ISPSD) - San Diego, CA, USA (2011.05.23-2011.05.26)] 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - A new vertical GaN SBD employing in-situ metallic gallium ohmic contact

Lim, Jiyong, Seok, Ogyun, Kim, Young-Shil, Han, Min-Koo, Kim, Minki
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Year:
2011
Language:
english
DOI:
10.1109/ispsd.2011.5890837
File:
PDF, 648 KB
english, 2011
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