[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Analysis of Si, InAs, and Si-InAs tunnel diodes and tunnel FETs using different transport models
Schenk, Andreas, Rhyner, Reto, Luisier, Mathieu, Bessire, CedricYear:
2011
Language:
english
DOI:
10.1109/sispad.2011.6035075
File:
PDF, 408 KB
english, 2011