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[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Overcoming DRAM scaling limitations by employing straight recessed channel array transistors with >100< uni-axial and [100] uni-plane channels
Kim, I.-G., Park, S.-H., Yoon, J.-S., Kim, D.-J., Noh, J.-Y., Lee, J.-H., Kim, Y.-S., Hwang, M.-W., Yang, K.-H., Joosung Park,, Kyungseok Oh,Year:
2005
Language:
english
DOI:
10.1109/iedm.2005.1609339
File:
PDF, 1.34 MB
english, 2005