Growth rate reduction in self-limiting growth of doped GaAs...

Materials Science in Semiconductor Processing 2003 Vol. 6; Iss. 5-6

Growth rate reduction in self-limiting growth of doped GaAs by molecular layer epitaxy

Jun-ichi Nishizawa, Toru Kurabayashi, Piotr Plotka, Hideyuki Kikuchi, Tomoyuki Hamano
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
6
Year:
2003
Language:
english
Pages:
3
DOI:
10.1016/j.mssp.2003.08.021
File:
PDF, 207 KB
english, 2003
Conversion to is in progress
Conversion to is failed