Effect of deposition conditions and annealing on W Schottky contacts on n-GaN
R Mehandru, S Kang, S Kim, F Ren, I Kravchenko, W Lewis, S.J PeartonVolume:
7
Year:
2004
Language:
english
Pages:
4
DOI:
10.1016/j.mssp.2004.01.002
File:
PDF, 313 KB
english, 2004