Structures prepared by implantation of silicon with...

Materials Science in Semiconductor Processing 2004 Vol. 7; Iss. 4-6

Structures prepared by implantation of silicon with nitrogen and annealing under high hydrostatic pressure

W. Rzodkiewicz, A. Kudla, A. Misiuk, B. Surma, J. Bak-Misiuk, J. Härtwig, J. Ratajczak
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Volume:
7
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.mssp.2004.09.003
File:
PDF, 259 KB
english, 2004
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