The Study of the density of localised gap states in...

Materials Science in Semiconductor Processing 2004 Vol. 7; Iss. 4-6

The Study of the density of localised gap states in amorphous silicon material using Space Charge Limited Currents technique

S. Guessasma, M. Chahdi
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Volume:
7
Year:
2004
Language:
english
Pages:
7
DOI:
10.1016/j.mssp.2004.09.009
File:
PDF, 259 KB
english, 2004
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