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Physical and electrical characterization of polysilicon vs. TiN gate electrodes for HfO2 transistors
Patrick S. Lysaght, Jeff J. Peterson, Brendan Foran, Chadwin D. Young, Gennadi Bersuker, Howard R. HuffVolume:
7
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.mssp.2004.09.111
File:
PDF, 511 KB
english, 2004